Direct mombe and movpe growth of ii-vi materials on silicon
CA 2128590 C · Owner: Zinck, Jennifer J. · Inventors: Rajavel, Damodaran; Zinck, Jennifer J.; Jensen, John E.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A metalorganic arsenic source comprising R3-mAsHm where R is an organic radical selected from the group consisting of CnH2n+1 and CnH2n-1, where n ranges from 1 to 6 and where m is 1 or 2, such as tert-butylarsine (t-BuAsH2) is useful in terminating a silicon surface with arsenic without carbon contamination, thereby permitting subsequent growth of high quality II-VI films, such as ZnSe. Use of this metalorganic arsenic source allows the full potential of the metalorganic molecular beam epitaxy (MOMBE) deposition technique, which has demonstrated superior flux control than that achieved by MBE, to be realized in the heteroepitaxy of HgCdTe on silicon substrates. Other metalorganic …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed July 21, 1994 and granted August 25, 1998. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended July 21, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by July 21, 2016.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.