Semiconductor laser
CA 2119159 A1 · Owner: Kurakake, Hirohide · Inventors: Kuramata, Akito; Uchida, Toru; Kurakake, Hirohide
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A group III-V compound semiconductor laser of a 1 µm band having an excellent conversion efficiency and a high characteristic temperature. The semiconductor laser can emit light in a 1.3 µm band or a 1.55 µm, and has a laser structure including an active layer for emitting light guide layers, sandwiching the active layer and having a band gap larger than the active layer, and clad layers embracing the guide layers and having a band gap larger than the guide layers. The lattice constants of the guide layers and clad layers are larger than a1 by 0.5 % or more and smaller than a2 by 0.5 % or more, where a1 represents the lattice constant of GaAs and a2 is the lattice constant of InP.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 16, 1994. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended March 16, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 16, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.