Method for preparation of silicon nitride gallium diffusion barrier for use in molecular beam epitaxial growth of gallium arsenide
CA 2118356 C · Owner: Goossen, Keith W. · Inventors: Goossen, Keith W.; Jan, William Y.; Walker, James A.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A technique is described for the preparation of a thin film of a silicon nitride diffusion barrier to gallium on a silicon integrated circuit chip. The technique involves reacting nitrogen and silane in a ratio of 53:1 to 300:1 in a plasma enhanced chemical vapor deposition apparatus. The described technique is of interest for use in the monolithic integration of interconnected GaAs/AlGaAs double heterostructures modulators and silicon MOSFET structures.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 18, 1994 and granted August 18, 1998. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 18, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 18, 2016.
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.