Method for lowering the phase transformation temperature of a metal silicide
CA 2118147 C · Owner: Rakowski, Donald W.D. · Inventors: Cabral, Cyril Jr.; Miles, Glen L.; Clevenger, Lawrence A.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium tungsten, or, cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 101 atoms/cm3. The refractory metal may be Mo, Co, W, Ta, Nb Ru, or Cr, and more, preferably is …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 14, 1994 and granted May 16, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 14, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 14, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.