Fermi threshold field effect transistor with reduced gate and diffusion capacitance
CA 2117426 C · Owner: Vinal, Albert W. · Inventors: Vinal, Albert W.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An improved Fermi FET structure with low gate and diffusion capacity allows conduction carriers to flow within the channel at a predetermined depth in the substrate below the gate without requiring an inversion layer to be created at the surface of the semiconductor. The low capacity Fermi FET is preferably implemented using a Fermi Tub having a predetermined depth and, with a conductivity type opposite the substrate conductivity type and the same conductivity type as the drain and source diffusions.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed January 28, 1993 and granted March 28, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended January 28, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by January 28, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.