Field effect transistor and method of manufacturing the same
CA 2116088 A1 · Owner: Yoshida, Ken-Ichi · Inventors: Yoshida, Ken-Ichi; Matsuzaki, Ken-Ichiro; Kuwata, Nobuhiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This invention provides a high-speed FET with a sufficiently high output current, and an FET having a high mobility of channel electrons and a high electron saturation rate. For this purpose, in this invention a, buffer layer, a first channel layer a first spacer, layer, a second channel layer a second spacer layer, a, third channel layer and a capping layer are sequentially, epitaxially grown on a semi-insulating GaAs semiconductor substrate. Drain and source regions are formed and a, gate electrode is formed to Schottky-contact the capping layer. Drain and source electrodes are formed to ohmic-contact the drain and source regions. Extension of a surface depletion layer from the substrate …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 21, 1994. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 21, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 21, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.