Semiconductor laser and method of manufacturing the same
CA 2115589 C · Owner: Yoshida, Ichiro · Inventors: Hashimoto, Junichi; Yoshida, Ichiro; Katsuyama, Tsukuru
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In a semiconductor laser having a p-type cladding layer consisting of GaInP or AIGaInP, an operating voltage is decreased. In a semiconductor laser formed on a GaAs substrate and having a p-type cladding layer consisting of GaInP or AlGaInP and a p-type contact layer consisting of GaAs or GaInAs, p-type buffer layers are formed between the p-type cladding layer and the p-type contact layer, which consists of a compound containing both arsenic (As) and phosphorus (P) and having a medium bandgap between those of the two layers.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 14, 1994 and granted April 30, 2002. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended February 14, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 14, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.