Esd input protection arrangement
CA 2115477 A1 · Owner: Mitel Corporation · Inventors: Orchard-Webb, Jonathan H.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An arrangement for protecting an input of a monolithic integrated circuit against ESD events, comprises a thick field bipolar main transistor adapted to breakdown under ESD stress to dissipate ESD energy, a thin field bipolar main transistor adapted to breakdown under ESD stress and an, attenuator resistor. The thin field transistor has a lower breakdown voltage than the thick field transistor whereby for an ESD event of a given polarity, the thin field transistor breaks down before the thick field transistor. During an ESD event current the thin field device responds, rapidly to the fast edge of an ESD transient and thereby shunts current that the thick field device is too slow to respond …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 11, 1994. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 11, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 11, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.