Integrated semiconductor devices and method for manufacture thereof
CA 2114563 C · Owner: American Telephone And Telegraph Company · Inventors: Goossen, Keith Wayne
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate flowing, an etch-resist in the form of a photoresist between the devices, allowing the etch-resist to dry and removing the, substrate from one of the semiconductor devices. Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically a hybrid, semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed January 31, 1994 and granted September 22, 1998. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended January 31, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by January 31, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.