Semiconductor laser having an algainp cladding layer
CA 2112319 C · Owner: Katsuyama, Tsukuru · Inventors: Yoshida, Ichiro; Hashimoto, Jun-Ichi; Katsuyama, Tsukuru
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor laser includes a GaAs substrate an, active layer made of a semiconductor material having a band gap energy smaller than that of GaAs, and a top clad having an AlGaInP cladding layer. An index antiguiding type semiconductor laser is constituted based on the above structure. A top clad includes a base layer formed on the active layer and a protrusion strip for current injection protruding from the base layer and having an AlGaInP cladding layer. An AlGaInP light diffusion layer with an Al proportion smaller than that of the AlGaInP cladding layer and inclusive of zero, is formed on the base layer adjacent to the protrusion strip. The base layer has such a thickness as allows …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 23, 1993 and granted January 5, 1999. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended December 23, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by December 23, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.