Dual gate fet and circuits using dual gate fet
CA 2110073 A1 · Owner: Sumitomo Electric Industries, Ltd. · Inventors: Shiga, Nobuo
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A dual gate FET structure allowing the FET to achieve a high gain, and circuits utilizing the dual gate FET including a variable gain amplifier and a mixer. The gate width of the first (source side) gate electrode is different from the width of a second (drain side) electrode. When the dual gate FET is used in a variable gain amplifier high gain, can be obtained when the drain-side gate is made narrower than the source-side gate. With the gate widths of the first and second gate electrodes reversed (source-side gate narrower) the FET is particularly well suited for use in a mixer circuit. - 13 -
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 26, 1993. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 26, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 26, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.