Semiconductor laser device
CA 2106596 C · Owner: Ohkubo, Michio · Inventors: Ohkubo, Michio; Kikuta, Toshio
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
There is provided a semiconductor laser device that can be driven for a high-output power level without degradation in the quality of the device. It comprises a double heterostructure including an active layer (5, 25) and an electrode layer (9 29) arranged on a semiconductor, substrate (l 21) having a current injection region extending through the electrode layer (9, 29) and the active layer (5 25), a structural scheme, being provided either in a region located above the active layer (5 25), or in a region covering an resonator of the active layer (5 25) in order, to reduce the injection current level of the device. With such an arrangement, the energy output level of the semiconductor …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 27, 1993 and granted June 5, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended September 27, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 27, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.