A dielectric isolated high voltage semiconductor device
CA 2102079 C · Owner: Sakurai, Naoki · Inventors: Sugawara, Yoshitaka; Sakurai, Naoki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A new semiconductor integrated circuit uses a dielectric separation substrate for realizing a high withstand voltage and high integration. The arrangement extends a depletion layer of a main junction beyond an insulating layer sandwiched between a support and semiconductor islands by applying a bias voltage to the support and the islands. This main junction is a pn junction to which a reverse bias voltage for securing the withstand voltage of the semiconductor element is applied. The impurity density and the thickness of the region between the bottom of the semiconductor island and the circuit element regions is set so that this region is fully depleted by a lower voltage than that at which …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 29, 1993 and granted January 5, 1999. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 29, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 29, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.