Semiconductor device comprising a lateral dmost with breakdown voltage raising zones and provisions for exchanging charge with the back gate region
CA 2096479 A1 · Owner: Koninklijke Philips Electronics N.V. · Inventors: Ludikhuize, Adrianus Willem
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
PHN 14068 16,03,1993, ABSTRACT, Semiconductor device comprising a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region. A semiconductor device of the RESURF type with a lateral DMOST (LDMOST), comprising a semiconductor body (l) of substantially a first conductivity type and a surface region (3) of a second conductivity type adjoining the surface (2). The LDMOST comprises a back gate region (5) of the first conductivity type provided in the surface region (3), with a source region (6) of the second conductivity type in the back gate region (5) and a channel region (7) defined between the source region (6) and an edge of the back …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed May 18, 1993. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended May 18, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by May 18, 2015.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.