Silicon-on-porous-silicon, method of production and material
CA 2094237 A1 · Owner: The Secretary Of State For Defence In Her Britannic Majesty'S Government Of The United Kingdom Of Great Britain And Northern Ireland · Inventors: Hodge, Alison Meryl; Keen, John Michael
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The invention provides a method of producing silicon-on-porous-silicon material comprising the steps of (i) manufacturing a porous silicon layer on a suitable silicon wafer such that the silicon, wafer has a porous silicon surface and a non-porous silicon surface, (ii) applying an implanted ion dose to at least a portion of the porous silicon surface such that the dose is sufficient to cause amorphization of porous silicon. The material produced by the method of the invention can then be used for production of silicon-on-insulator material by oxidation of remaining porous silicon and recrystallization of amorphised silicon. Typically such material can be used for manufacture of e.g. SOI …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 18, 1991. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 18, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 18, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.