Plasma cvd method and apparatus therefor
CA 2092756 C · Owner: Murata, Masayoshi · Inventors: Murata, Masayoshi; Takeuchi, Yoshiaki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This invention provides a plasma CVD method aimed at forming an amorphous silicon thin film on a large-area substrate at a high speed and also an apparatus therefor. The method and apparatus are characterized by a reaction vessel, means for feeding a reactant gas to the reaction vessel and discharging the same, discharging electrodes accommodated in the reaction vessel, a source for supplying power for glow discharge to the discharging electrodes two, pairs of solenoid coils arranged on opposite sides of said reaction vessel and so disposed that the axes thereof perpendicularly intersect each other as well as perpendicularly the electric field formed between the discharging electrodes, and …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 26, 1993 and granted August 3, 1999. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended March 26, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 26, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.