Semiconductor device
CA 2092215 A1 · Owner: Shikata, Shinichi · Inventors: Shikata, Shinichi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This transistor is a pnp transistor having a heterojunction of p-type diamond (or BPXN1-X 6HSiC) and, n-type SiC (3CSiC)and having a structure in which a p+-SiC (3CSiC) layer, a p-SiC (3CSiC)layer, an n+-SiC (3CSiC) layer, a p-diamond (or BPXN1-X, 6HSiC) layer and a, p+-diamond (or BPXN1-X, 6HSiC) layer are formed on a substrate, and a collector electrode, a base electrode and an emitter electrode are formed on and electrically connected to the p+-Sic layer, the n+-SiC layer and the, layer, respectively. This semiconductor device has a high resistance to environment.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 23, 1993. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended March 23, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 23, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.