Canadian application, no grantCanada
Method for fabricating diodes for electrostatic discharge protection and voltage references
CA 2092050 A1 · Owner: Shiota, Philip · Inventors: Shiota, Philip
Overview
Drawings and full text
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A novel process is taught for forming diodes simulataneouly with the formation of typical prior art Ldd MOS devices. The diodes thus formed have low breakdown voltages making them suitable for use as voltage reference diodes or, diodes for ESD protection.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 19, 1993. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended March 19, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 19, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledMarch 19, 1993
GrantedNo grant recorded
Term endedMarch 19, 2013
Patent numberCA 2092050 A1
Classification (IPC)H01L27/02 +1 more
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.