Semiconductor non-volatile memory with tunnel oxide
CA 2091332 C · Owner: Walker, Andrew Jan · Inventors: Verhaar, Robertus Dominicus Joseph; Walker, Andrew Jan
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Very thin tunnel oxides are used in conventional non-volatile memories to obtain a sufficiently strong tunnelling current to or from the floating gate. Usual, thicknesses of the tunnel oxide lie in the 8-10 nm range. The invention renders it possible to use tunnel oxides of a much greater thickness, for, example of the order of 20 nm for comparable tunnelling current values. According to, the invention, the tunnelling effect is enhanced by implantation of a heavy high-energy, ion, for example As, into a comparatively thin poly layer of the oxide. During this, Si, atoms are propelled from the polylayer into the oxide so that the oxide is , enriched with, Si which causes a major change in …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 9, 1993 and granted January 29, 2002. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended March 9, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 9, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.