Semiconductor device having polysilicon thin-film

Abstract From the Canadian patent

In the crystal structure of a polysilicon thin film having a field effect mobility µFE of about 80 cm2/V~sec, a grain size is about 200 nm and a crystallite size on the (111) plane is about 180 nm. The crystal size corresponds to the size of a completely monocrystallized portion of a grain. The condition of obtaining a field effect mobility µFE of about 80 cm2/V~sec is that the crystallite size on the (111) plane is at least 180 nm (measured value). By taking the crystallite size into consideration it becomes, possible to achieve a high field effect mobility µFE which cannot be obtained merely by increasing the grain size.