Semiconductor device
CA 2089398 A1 · Owner: Kuwata, Nobuhiro · Inventors: Kuwata, Nobuhiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A high speed transistor featured by a wide operation range and a high gain has a channel layer of three-layer structure having undoped GaInAs layers 130a and 130b arranged above and beneath a GaAs layer 140 including at least one delta doped layer (n-type). A cap layer 150 which is an undoped GaAs layer and a buffer layer 120 are formed above and beneath the channel layer of three-layer structure, on a substrate 110. A gate electrode 340 and a, source region 350a, a drain region 350b a source electrode, 360 and a drain electrode 370 which are self-aligned to the gate electrode are formed.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 12, 1993. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 12, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 12, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.