Semiconductor device, light-emitting diode and transistor structure making use of resonant tunneling
CA 2085361 A1 · Owner: Interuniversitair Micro-Elektronica Centrum Vzw · Inventors: Borghs, Gustaaf; Genoe, Jan; Van Hoof, Chris
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The present invention provides a semiconductor device comprising: a first layer of semiconductor material of the one conductivity type; a second layer of semiconductor material of the other conductivity type; and a structure for resonant tunneling between the first and second layer of semiconductor material. The resonant tunneling structure (RTS) makes use of the extremely rapid tunneling effect wherein charge carriers tunnel through an energy barrier. The tunneling time is decisive here and not the radiative recombination. Extremely rapid optical oscillations can be obtained herewith with a frequency for instance in the region of 750 GHz. Electrical oscillations of such frequencies have …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 16, 1992. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended April 16, 2012.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 16, 2014.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.