Strained quantum well type semiconductor laser device
CA 2083026 C · Owner: The Furukawa Electric Co. Ltd. · Inventors: Kikuta, Toshio; Kasukawa, Akihiko
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A strained quantum well type semiconductor laser device is disclosed comprising a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized wherein tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs respectively.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 16, 1992 and granted June 24, 1997. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended November 16, 2012.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 16, 2014.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.