Optically activated wafer-scale pulser with a1gaas epitaxial layer
CA 2080433 C · Owner: Youmans, Robert J. · Inventors: Weiner, Maurice; Youmans, Robert J.; Jasper, Louis J. Jr.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A device for generating pulses of radio frequency energy in response to pulses of laser light comprises a circular wafer of GaAs having metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber brought into contact with it so that laser light can be introduced at both sides of the wafer.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 13, 1992 and granted May 16, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 13, 2012.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 13, 2014.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.