Multiple narrow-line-channel fet having improved noise characteristics
CA 2080080 C · Owner: Rohm Co. Ltd. · Inventors: Nakagawa, Yoshikazu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Insulating layers are formed, for instance by ion, injection, in a multilayer of compound semiconductor layers in regions spaced at predetermined intervals to leave a plurality, of narrow channel layers between the insulating layers. A gate electrode is formed on the insulating layers and channel layers so as to traverse those layers.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 7, 1992 and granted September 16, 1997. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 7, 2012.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 7, 2014.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.