Method for preparing semiconductor member
CA 2069038 C · Owner: Yonehara, Takao · Inventors: Sakaguchi, Kiyofumi; Yonehara, Takao
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for preparing a semiconductor member comprises process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on the porous Si substrate; primary bonding process of bonding the porous Si substrate and an insulating substrate via the non-porous Si monocrystalline layer; etching process of etching the porous Si to remove the porous Si by chemical etching after the primary bonding process; and secondary bonding process of strengthening the primary bonding after the etching process.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed May 20, 1992 and granted August 12, 1997. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended May 20, 2012.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by May 20, 2014.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.