Field effect transistor
CA 2067048 A1 · Owner: Kuwata, Nobuhiro · Inventors: Kuwata, Nobuhiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
According to the invention an FET includes an, epitaxially grown n-type GaInAs channel layer first, and second undoped GaInAs layers formed to sandwich the channel layer, a buffer layer formed on a GaAs substrate to be in contact with one side of the first layer, and a cap layer formed to be in contact with one side of the second layer. At this time each of the, first and second undoped GaInAs layers must be formed as a graded layer in which the In composition ratio is gradually varied such that the In composition ratio is high on the channel layer side and is low on the buffer layer side and the cap layer side. If the first and second layers and the channel layer are uniform layers each …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 24, 1992. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended April 24, 2012.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 24, 2014.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.