Hot-carrier suppressed sub-micron misfet device
CA 2065242 A1 · Owner: Board Of Regents, The University Of Texas System · Inventors: Shin, Hyungsoon; Tasch, Aloysious Felix Jr.; Maziar, Christine Marie
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Hot-carrier suppression in a sub-micron MISFET structure is achieved by providing a drain region which includes a steeply profiled N+ (or P+) doped region (34) in the surface of a semiconductor body (30) with a first epitaxial layer (44) formed thereover having N- (or P-) dopant concentration. A second N+ (or P+) epitaxial layer (48) is formed over the first epitaxial layer and functions as low ohmic contact to the drain region. In a preferred embodiment both the source and drain regions have dopant concentrations provided by N+ (or P+) doped regions (32 34) in the surface of a, substrate (30) with epitaxial layers thereover. The dopant profile reduces the voltage drop across the more …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 19, 1990. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended September 19, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 19, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.