Process for the chemical vapor deposition of copper
CA 2058483 C · Owner: Dyer, Paul N. · Inventors: Dyer, Paul N.; Norman, John A. T.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A process is provided for selectively depositing copper films on metallic or other electrically conducting portions of substrate surfaces by contacting the substrate at a temperature from 110° to 190°C with a volatile organometallic copper complex, in the gas phase represented by the, structural formula: where R1 and R3 are each independently C1-C8 perfluoroalkyl R2 is H or, C1-C8 perfluoroalkyl and L is carbon monoxide an isonitrile, or an, unsaturated hydrocarbon ligand containing at least one non-aromatic unsaturation.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 27, 1991 and granted January 5, 1999. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended December 27, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by December 27, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.