A quatum barrier semiconductor optical device
CA 2055208 C · Owner: Irikawa, Michinori · Inventors: Irikawa, Michinori; Iwase, Masayuki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The quantum barrier semiconductor optical devices according to this invention are characterized by strained layer super lattice multiple quantum barriers provided between active layer and p-clad layer or within p-clad layer to obtain resonance scattering of incident overflowing electrons, that is to realize phase condition in which the incident overflowing electron wave and reflected electron wave enhance each other, in the double hetero-structure where active layer having at least one GaInAs(P) layer is sandwiched between n-clad layer and p-clad layer. In this case, the actives layer should desirably have quantum well structure. The quantum barrier semiconductor optical device comprises a …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 8, 1991 and granted July 4, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended November 8, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 8, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.