Fermi threshold field effect transistor

Abstract From the Canadian patent

A field effect transistor (FET) operates in the enhancement mode without requiring inversion by setting the device's threshold voltage to twice the Fermi potential of the semiconductor material. The FET referred to as a Fermi Threshold FET or Fermi-FET, has a threshold voltage which is independent of oxide thickness, channel length drain voltage and substrate doping. The vertical electric field in the channel becomes zero thereby, maximizing carrier mobility, and minimizing hot electron effects. A high speed device, substantially independent of device dimensions is thereby provided, which may be manufactured using relaxed groundrules, to provide low cost high yield, devices. Temperature …