P-n-p diamond transistor
CA 2046284 C · Owner: Gersan Establishment · Inventors: Welbourn, Christopher Mark
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The present invention provides a P-N-P diamond transistor and a method of manufacture thereof. The transistor comprises a diamond substrate having two p-type semiconducting regions separated by an insulating region with an n-type semiconducting layer established by chemical vapour deposition. Preferably the p-type regions are obtained by doping with boron and controlling the concentration of nitrogen impurities by the use of nitrogen getters. The n-type layer preferably contains phosphorus.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 1, 1990 and granted December 16, 1997. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended February 1, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 1, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.