Process for preparing thin film of oxide superconductor
CA 2045890 C · Owner: Higaki, Kenjiro · Inventors: Itozaki, Hideo; Matsuura, Takashi; Higaki, Kenjiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A process for preparing a thin film of oxide superconductor on a single crystal substrate of semiconductor by physical vapour deposition. At first an under-layer of an oxide having a thickness of 50 to 200 .ANG. is deposited on the single crystal substrate of semiconductor at a substrate temperature of lower than 500 °C, and secondly an upper-layer of superconducting oxide material is deposited on said under-layer at a substrate temperature of higher than 600°C.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 28, 1991 and granted October 6, 1998. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended June 28, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 28, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.