Stabilization of the interface between aluminum and titanium nitride
CA 2041730 C · Owner: Ouellet, Luc · Inventors: Ouellet, Luc
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor device comprises at least one metal interconnect layer, a titanium-based barrier layer in contact with the metal interconnect layer. The metal interconnect layer contains titanium in an amount up to the limit of solid solubility at the peritectic temperature. The arrangement is effective to reduce hillock, spike, and notch formation in the semiconductor device.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed May 2, 1991 and granted August 21, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended May 2, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by May 2, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.