Semiconductor laser diode
CA 2038835 A1 · Owner: Matsumoto, Narihito · Inventors: Okamoto, Hiroshi; Matsumoto, Narihito; Irikawa, Michinori
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In a semiconductor laser diode having a single- or multi-quantum well structure active layer and a GRIN-SCH, structure light confinement layer a pair of cleaved facets, for forming a resonator are covered with insulator films so as to make one facet low reflectivity and the other high reflectivity. Thus, a high output power in single axial mode can be produced from the low-reflectivity facet of the semiconductor laser diode.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 22, 1991. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended March 22, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 22, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.