Opposed field magnetoresistive memory sensing
CA 2038469 C · Owner: Micron Technology, Inc. · Inventors: Hurst, Allan T. Jr.; Pohm, Arthur V.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto in the, memory films of these bit structures that is oriented, in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof and sensing a change in electrical resistance of these bit structures as a result of that current.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 18, 1991 and granted December 18, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended March 18, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 18, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.