Magnetron sputtering apparatus and thin film depositing method
CA 2037260 A1 · Owner: Akao, Yasuhiko · Inventors: Akao, Yasuhiko; Takahashi, Nobuyuki; Yoshida, Hideaki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A magnetron cathode sputtering apparatus Provides an increased strength of the magnetic field around the center area of a target when the sputtering occurs on the target, thereby reducing any dust particles that might settle on the center target area and might be flying toward a water or each individul substrate thereon resulting in forming or, depositing a thin film containing defects such as pin holes on the water. A magnetron cathod sputtering method uses such apparatus to form or deposit a thin film layer on the wafer with its distribution limited, to within + 5% and provides an improved step coverage for the contact holes formed in each individual substrate on the wafer. from which any …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 27, 1991. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 27, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 27, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.