Ferroelectric memory structure
CA 2035128 A1 · Owner: Armstrong, Bruce G. · Inventors: Armstrong, Bruce G.; Bullington, Jeff A.; Evans, Joseph T. Jr.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Architectures for a ferroelectric memory which avoids the half select phenomenon and the problems associated with destructive readout are disclosed. Non-destructive readout is provided by measuring current through the ferroelectric memory as a measure of its resistance. Information is stored in the ferroelectric memory element by altering its resistance through a polarizing voltage. The half select phenomenon is avoided by using isolation techniques. In various embodiments, zener diodes or bipolar junction transistors are used for isolation.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed January 29, 1991. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended January 29, 2011.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by January 29, 2013.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.