Thin, dielectrically isolated island resident transistor structure having low collector resistance

Abstract From the Canadian patent

The occupation area and thickness of dielectrically isolated island-resident transistor structures, which employ a buried subcollector for providing low collector resistance at the bottom of the island, are reduced by tailoring the impurity concentration of a reduced thickness island region to provide a low resistance current path from an island location directly beneath the base region to the collector contact. The support substrate is biased at a voltage which is less than the collector voltage so that the, portion of the collector (island) directly beneath the emitter projection onto the base is depleted of carriers prior to the electric field at that location reaching BCVEO so as not …