Method of producing cmos transistor

Abstract From the Canadian patent

The method of producing a CMOS transistor device. A pair of device regions are formed and separated relation from each other by a field oxide film on a pair of corresponding well regions formed in a semiconductor substrate. A gate insulating film and a gate electrode are sequentially formed on each of the device regions. The gate insulating film is removed through a mask of the patterned gate electrode to expose a silicon active surface at least in one of the device regions. A diborane gas containing P type boron impurity is applied to the silicon active surface to form thereon a boron adsorption film. N type arsenic impurity is doped into the other device region by ion implantation to form …