Semiconductor laser elements and method for the production thereof
CA 2028899 C · Owner: Ijichi, Teturo · Inventors: Ijichi, Teturo; Okamoto, Hiroshi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an InxGa1-xAs strained quantum well layer and a GaAs barrier layer and clad layers arranged up and down of said active layer through an epitaxial growth means. A lattice mismatching rate of the clad layer with respect to the substrate is less than 10-3.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 30, 1990 and granted March 4, 1997. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 30, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 30, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.