Method of forming a thin copper film by low temperature cvd
CA 2027285 A1 · Owner: Kimura, Masao · Inventors: Arai, Juichi; Kimura, Masao; Jalby, Pierre
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A thin copper film is formed by CVD by (a) forming a gas, stream containing a copper halide followed by introducing, said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein (b) introducing, hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament and, (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 10, 1990. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended October 10, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 10, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.