Bicmos process
CA 2024640 C · Owner: International Business Machines Corporation · Inventors: Schepis, Dominic; Lechaton, John S.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A BiCMOS PROCESS, Abstract of the Invention A method for manufacturing a BiCMOS device includes providing a semiconductor substrate including first and second electrically isolated device regions. A layer of insulating material is formed over the first device region, and a layer of conductive material is formed conformally over the device. Portions of the conductive layer are removed to leave a base contact on the surface of the second device region and an insulated gate contact over the surface of the first device region. A FET is formed in the first device region having a channel under the insulated gate. A vertical bipolar transistor is formed in the second device region having a base …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 5, 1990 and granted July 27, 1993. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended September 5, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 5, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.