Insulator structure for amorphous silicon thin-film transistors
CA 2021079 A1 · Owner: Possin, George Edward · Inventors: Garverick, Linda Mason; Possin, George Edward
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
RD-19,360, IMPROVED INSULATOR STRUCTURE FOR AMORPHOUS SILICON THIN-FILM TRANSISTORS, A thin-film field-effect-transistor (TFT) includes a gate electrode disposed on a substrate; a first thick layer of silicon nitride is disposed on the substrate and over the gate electrode and a second thinner layer of silicon nitride is disposed on the first layer. The first silicon nitride layer has a silicon-to-nitrogen concentration ratio selected to provide optimum structural characteristics such as high, density, high dielectric strength low etch rate and the, like, to the resulting TFT while the second silicon nitride layer has a silicon-to-nitrogen concentration ratio selected to provide a good …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed July 12, 1990. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended July 12, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by July 12, 2012.
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Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.