Semiconductor film and process for its production
CA 2019923 C · Owner: Ashida, Yoshinori · Inventors: Miyachi, Kenji; Ashida, Yoshinori; Fukuda, Nobuhiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG. and (b) a modifying step of modifying the formed film the steps being repeated multiple times.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 27, 1990 and granted December 14, 1993. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended June 27, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 27, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.