Electrode structure for iii-v compound semiconductor element and method of manufacturing the same
CA 2019026 C · Owner: Yamabayashi, Naoyuki · Inventors: Yamabayashi, Naoyuki; Yano, Takashi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The present invention relates to an electrode structure formed on a III-V compound semiconductor element and a method for manufacturing the same and an object thereof is to provide an electrode which exhibits a high wire bonding strength, a low ohmic contact resistance, and high reliability, and is easy to shape itself. The electrode structure of the present invention is formed by annealing after the formation of a laminated structure having an ohmic layer including at least Ni formed on the III-V compound semiconductor element a, bonding layer to be connected with a bonding wire a, stopper layer provided between the ohmic layer and the bonding layer and an isolation layer provided between …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 14, 1990 and granted January 6, 1998. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended June 14, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 14, 2012.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.