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Expired Canadian patentCanada

Photodiode

CA 2018320 C · Owner: Zyskind, John L. · Inventors: Sulhoff, James W.; Zyskind, John L.; Feldman, Robert D.

CIPO record

Overview

Drawings and full text

Its claims, description and drawings are in the Canadian Patents Database.

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Abstract From the Canadian patent

In this invention there is disclosed a new photodiode which comprises a semimetal/semiconductor junction. Distortion of the bands associated with this type of junction result in current flow when an electron hole pair is formed by for, example, a photon impinging upon the junction. The photodiode operates in the photovoltaic mode. However, rather than relying on impurity doping to fabricate a p-n junction, the semimetallic nature of HgTe and its large conduction band offsets with Hg1-xCdx Te are used to create a rectifying Schottky like structure.

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Filed June 5, 1990 and granted July 19, 1994. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended June 5, 2010.
  • A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 5, 2012.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledJune 5, 1990
GrantedJuly 19, 1994
Term endedJune 5, 2010
Patent numberCA 2018320 C
Classification (IPC)H01L31/02 +2 more

Timeline

Timeline From CIPO dates

1991199319951997199920012003200520072009Application filedJune 5, 1990Patent grantedJuly 19, 1994Term endedJune 5, 2010

Sources & verification

Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.