Procedure and apparatus for rapid thermal annealing of implanted semiconductors
CA 2015411 C · Owner: Zydzik, George J. · Inventors: Van Uitert, Legrand G.; Schwartz, Bertram; Grim, Karen A.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
23-, Procedure and Apparatus for Rapid Thermal Annealing of Implanted Semiconductors, Abstract, This invention is directed to the fabrication of semiconductor devices especially those comprising III-V and II-VI compound semiconductor materials and, involves Rapid Thermal Annealing (RTA) of semiconductor wafers especially those, implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA. In a preferred embodiment the RTA comprises (a) a pre-anneal …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 25, 1990 and granted March 15, 1994. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 25, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 25, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.