Fabrication of semiconductor devices using phosphosilicate glasses

Abstract From the Canadian patent

18-, Fabrication of Semiconductor Devices Using Phosphosilicate Glasses, Abstract This invention is directed to a process of producing semiconductor i devices which involves deposition of protective glass layers by a particle beam technique from targets of phosphosilicate glass as well as a process for production, of such targets. The phosphosilicate glass containing 1-15 mole percent P2O5 is produced by a sol/gel technique which involves mixing of a fumed silica with a, surface area of 50-400 m2/g, preferably about 200 m2/g with phosphoric acid andwater to form a sol with 20-55 wt. % silica allowing it to gel, drying at ambient, conditions dehydrating at about 650°C in an atmosphere of an …