Method of manufacturing a semiconductor integrated circuit device
CA 2014399 C · Owner: Sumitomo Electric Industries, Ltd. · Inventors: Sasaki, Goro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
There is disclosed a method of manufacturing an integrated circuit, comprising: the first step of growing a first epitaxial crystal on a compound semiconductor substrate, removing an unnecessary region of the first epitaxial crystal to form a residual portion, and covering the residual portion with a selective growth mask, the second step of growing a second epitaxial crystal on an exposed substrate portion, removing an unnecessary portion of the second epitaxial crystal to form a residual portion of the second epitaxial crystal, and covering the residual portion of the second epitaxial crystal with a selective growth mask, and the third step of growing a third epitaxial crystal on an …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 11, 1990 and granted February 23, 1993. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 11, 2010.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 11, 2012.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.